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NGTB30N135IHRWG

  • NGTB30N135IHRWG
  • NGTB30N135IHRWG

NGTB30N135IHRWG

NGTB30N135IHRWG

ON Semiconductor

NGTB30N135IHRWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB30N135IHRWG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 6.500007g
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 394W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 394W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35kV
Max Collector Current 60A
Collector Emitter Breakdown Voltage 1.35kV
Voltage - Collector Emitter Breakdown (Max) 1350V
Collector Emitter Saturation Voltage 2.3V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 234nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/250ns
Switching Energy 850μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.54000 $5.54
30 $4.73333 $141.9999
120 $4.12533 $495.0396
510 $3.53769 $1804.2219
1,020 $3.01079 $3.01079
NGTB30N135IHRWG Product Details

NGTB30N135IHRWG                    Description

 

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on?state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.


NGTB30N135IHRWG                   Features


? Extremely Efficient Trench with Fieldstop Technology

? 1350 V Breakdown Voltage

? Optimized for Low Losses in IH Cooker Application

? Reliable and Cost Effective Single Die Solution

? These are Pb?Free Devices

 

NGTB30N135IHRWG                   Applications


? Inductive Heating

? Consumer Appliances

? Soft Switching


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