NGTB35N60FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB35N60FL2WG Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2014
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
300W
Element Configuration
Single
Input Type
Standard
Power - Max
300W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
70A
Reverse Recovery Time
68 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Test Condition
400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 35A
IGBT Type
Trench Field Stop
Gate Charge
125nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
72ns/132ns
Switching Energy
840μJ (on), 280μJ (off)
Height
21.08mm
Length
16.26mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.025520
$8.02552
10
$7.571245
$75.71245
100
$7.142684
$714.2684
500
$6.738381
$3369.1905
1000
$6.356964
$6356.964
NGTB35N60FL2WG Product Details
NGTB35N60FL2WG Description
The NGTB35N60FL2WG is an IGBT - Field Stop II. This Insulated Gate Bipolar Transistor (IGBT) offers low on-state voltage and little switching loss, and it has a durable and economical Field Stop II Trench structure. It performs exceptionally well in demanding switching applications. The IGBT is a good choice for solar and UPS applications. A soft and fast co-packaged free-wheeling diode with a low forward voltage is incorporated into the device.
NGTB35N60FL2WG Features
Optimized for High Speed Switching
5 μs Short?Circuit Capability
These are Pb?Free Devices
Extremely Efficient Trench with Field Stop Technology