NJVMJB45H11T4G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 10A volts is possible.
NJVMJB45H11T4G Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
NJVMJB45H11T4G Applications
There are a lot of ON Semiconductor NJVMJB45H11T4G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
