NJVMJD243T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJVMJD243T4G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Terminal Position
SINGLE
Terminal Form
GULL WING
Base Part Number
MJD243
Pin Count
3
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.4W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
40MHz
Frequency - Transition
40MHz
Collector Base Voltage (VCBO)
100V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.510334
$2.510334
10
$2.368240
$23.6824
100
$2.234189
$223.4189
500
$2.107725
$1053.8625
1000
$1.988420
$1988.42
NJVMJD243T4G Product Details
NJVMJD243T4G Overview
This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.As you can see, the part has a transition frequency of 40MHz.The maximum collector current is 4A volts.
NJVMJD243T4G Features
the DC current gain for this device is 40 @ 200mA 1V the vce saturation(Max) is 600mV @ 100mA, 1A a transition frequency of 40MHz
NJVMJD243T4G Applications
There are a lot of ON Semiconductor NJVMJD243T4G applications of single BJT transistors.