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NJVMJD243T4G

NJVMJD243T4G

NJVMJD243T4G

ON Semiconductor

NJVMJD243T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD243T4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1.4W
Terminal Position SINGLE
Terminal FormGULL WING
Base Part Number MJD243
Pin Count3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.4W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage100V
Transition Frequency 40MHz
Frequency - Transition 40MHz
Collector Base Voltage (VCBO) 100V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:25170 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.510334$2.510334
10$2.368240$23.6824
100$2.234189$223.4189
500$2.107725$1053.8625
1000$1.988420$1988.42

NJVMJD243T4G Product Details

NJVMJD243T4G Overview


This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.As you can see, the part has a transition frequency of 40MHz.The maximum collector current is 4A volts.

NJVMJD243T4G Features


the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 40MHz

NJVMJD243T4G Applications


There are a lot of ON Semiconductor NJVMJD243T4G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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