TIP42A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP42A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
6A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.87000
$0.87
50
$0.71960
$35.98
100
$0.58740
$58.74
500
$0.46432
$232.16
1,000
$0.37145
$0.37145
2,500
$0.33662
$0.67324
5,000
$0.31341
$1.56705
TIP42A Product Details
TIP42A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 600mA, 6A.Single BJT transistor comes in a supplier device package of TO-220AB.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
TIP42A Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 600mA, 6A the supplier device package of TO-220AB
TIP42A Applications
There are a lot of Rochester Electronics, LLC TIP42A applications of single BJT transistors.