TIP42A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP42A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
6A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.87000
$0.87
50
$0.71960
$35.98
100
$0.58740
$58.74
500
$0.46432
$232.16
TIP42A Product Details
TIP42A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 600mA, 6A.Single BJT transistor comes in a supplier device package of TO-220AB.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
TIP42A Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 600mA, 6A the supplier device package of TO-220AB
TIP42A Applications
There are a lot of Rochester Electronics, LLC TIP42A applications of single BJT transistors.