2PA1576R,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PA1576R,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PA1576
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
180
VCEsat-Max
0.5 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.267417
$0.267417
10
$0.252280
$2.5228
100
$0.238000
$23.8
500
$0.224528
$112.264
1000
$0.211819
$211.819
2PA1576R,115 Product Details
2PA1576R,115 Overview
DC current gain in this device equals 180 @ 1mA 6V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, the part has a transition frequency of 100MHz.A breakdown input voltage of 50V volts can be used.The maximum collector current is 150mA volts.
2PA1576R,115 Features
the DC current gain for this device is 180 @ 1mA 6V the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 100MHz
2PA1576R,115 Applications
There are a lot of Nexperia USA Inc. 2PA1576R,115 applications of single BJT transistors.