NJVNJD1718T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVNJD1718T4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.68W
Frequency
80MHz
Number of Elements
1
Power Dissipation
1.68W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
2A
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.30922
$0.61844
5,000
$0.28789
$1.43945
12,500
$0.28434
$3.41208
NJVNJD1718T4G Product Details
NJVNJD1718T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 2A volts can be achieved.
NJVNJD1718T4G Features
the DC current gain for this device is 70 @ 500mA 2V the vce saturation(Max) is 500mV @ 50mA, 1A the emitter base voltage is kept at 5V
NJVNJD1718T4G Applications
There are a lot of ON Semiconductor NJVNJD1718T4G applications of single BJT transistors.