NJVNJD1718T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 2A volts can be achieved.
NJVNJD1718T4G Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
NJVNJD1718T4G Applications
There are a lot of ON Semiconductor NJVNJD1718T4G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
