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PBSS4160TVL

  • PBSS4160TVL
  • PBSS4160TVL

PBSS4160TVL

PBSS4160TVL

Nexperia USA Inc.

PBSS4160TVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4160TVL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 3
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 400mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 220MHz
Frequency - Transition 220MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.13356 $1.3356
PBSS4160TVL Product Details

PBSS4160TVL Overview


In this device, the DC current gain is 250 @ 1mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).220MHz is present in the transition frequency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PBSS4160TVL Features


the DC current gain for this device is 250 @ 1mA 5V
the vce saturation(Max) is 250mV @ 100mA, 1A
a transition frequency of 220MHz

PBSS4160TVL Applications


There are a lot of Nexperia USA Inc. PBSS4160TVL applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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