2SAR574D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR574D3TL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
10W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
280MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.530760
$0.53076
10
$0.500717
$5.00717
100
$0.472375
$47.2375
500
$0.445636
$222.818
1000
$0.420412
$420.412
2SAR574D3TL1 Product Details
2SAR574D3TL1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
2SAR574D3TL1 Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 400mV @ 50mA, 1A
2SAR574D3TL1 Applications
There are a lot of ROHM Semiconductor 2SAR574D3TL1 applications of single BJT transistors.