DCP69-13 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In the part, the transition frequency is 200MHz.Single BJT transistor can be broken down at a voltage of 20V volts.A maximum collector current of 1A volts is possible.
DCP69-13 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
DCP69-13 Applications
There are a lot of Diodes Incorporated DCP69-13 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
