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MMST3904T146

MMST3904T146

MMST3904T146

ROHM Semiconductor

MMST3904T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMST3904T146 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 20mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number T3904
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 40
Continuous Collector Current 200mA
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Collector-Base Capacitance-Max 4pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.025590 $0.02559
500 $0.018816 $9.408
1000 $0.015680 $15.68
2000 $0.014385 $28.77
5000 $0.013444 $67.22
10000 $0.012506 $125.06
15000 $0.012095 $181.425
50000 $0.011893 $594.65
MMST3904T146 Product Details

MMST3904T146 Overview


In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20mA).Parts of this part have transition frequencies of 300MHz.Input voltage breakdown is available at 40V volts.Maximum collector currents can be below 200mA volts.

MMST3904T146 Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 20mA
a transition frequency of 300MHz

MMST3904T146 Applications


There are a lot of ROHM Semiconductor MMST3904T146 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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