NSS40200UW6T1G Overview
DC current gain in this device equals 150 @ 1A 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -100mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 20mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In this part, there is a transition frequency of 140MHz.A breakdown input voltage of 40V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
NSS40200UW6T1G Features
the DC current gain for this device is 150 @ 1A 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 300mV @ 20mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
NSS40200UW6T1G Applications
There are a lot of ON Semiconductor NSS40200UW6T1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
