NSV40200LT1G Overview
This device has a DC current gain of 220 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -135mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 170mV @ 200mA, 2A.The base voltage of the emitter can be kept at -7V to achieve high efficiency.A transition frequency of 100MHz is present in the part.As a result, it can handle voltages as low as 40V volts.A maximum collector current of 2A volts can be achieved.
NSV40200LT1G Features
the DC current gain for this device is 220 @ 500mA 2V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 170mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 100MHz
NSV40200LT1G Applications
There are a lot of ON Semiconductor NSV40200LT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
