NSV60200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSV60200LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
460mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
540mW
Halogen Free
Halogen Free
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
220mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
2A
Collector Emitter Saturation Voltage
220mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
-7V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.088400
$0.0884
500
$0.065000
$32.5
1000
$0.054167
$54.167
2000
$0.049694
$99.388
5000
$0.046443
$232.215
10000
$0.043203
$432.03
15000
$0.041782
$626.73
50000
$0.041084
$2054.2
NSV60200LT1G Product Details
NSV60200LT1G Overview
This device has a DC current gain of 150 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 220mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 200mA, 2A.An emitter's base voltage can be kept at -7V to gain high efficiency.A maximum collector current of 2A volts is possible.
NSV60200LT1G Features
the DC current gain for this device is 150 @ 500mA 2V a collector emitter saturation voltage of 220mV the vce saturation(Max) is 220mV @ 200mA, 2A the emitter base voltage is kept at -7V
NSV60200LT1G Applications
There are a lot of ON Semiconductor NSV60200LT1G applications of single BJT transistors.