NSV60200LT1G Overview

This device has a DC current gain of 150 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 220mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 200mA, 2A.An emitter's base voltage can be kept at -7V to gain high efficiency.A maximum collector current of 2A volts is possible.

NSV60200LT1G Features

the DC current gain for this device is 150 @ 500mA 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at -7V

NSV60200LT1G Applications

There are a lot of ON Semiconductor NSV60200LT1G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter