NSS30071MR6T1G Overview

This device has a DC current gain of 150 @ 100mA 3V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.A VCE saturation (Max) of 400mV @ 70mA, 700mA means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 700mA.Single BJT transistor can take a breakdown input voltage of 30V volts.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.

NSS30071MR6T1G Features

the DC current gain for this device is 150 @ 100mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 70mA, 700mA
the emitter base voltage is kept at 5V
the current rating of this device is 700mA

NSS30071MR6T1G Applications

There are a lot of ON Semiconductor NSS30071MR6T1G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter