MMBT2132T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMBT2132T3G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
JESD-30 Code
R-PDSO-G6
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
342mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 70mA, 700mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
700mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.07000
$0.07
500
$0.0693
$34.65
1000
$0.0686
$68.6
1500
$0.0679
$101.85
2000
$0.0672
$134.4
2500
$0.0665
$166.25
MMBT2132T3G Product Details
MMBT2132T3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 3V.A VCE saturation (Max) of 400mV @ 70mA, 700mA means Ic has reached its maximum value(saturated).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
MMBT2132T3G Features
the DC current gain for this device is 150 @ 100mA 3V the vce saturation(Max) is 400mV @ 70mA, 700mA
MMBT2132T3G Applications
There are a lot of Rochester Electronics, LLC MMBT2132T3G applications of single BJT transistors.