NSS30201MR6T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 500mA 5V.The collector emitter saturation voltage is 60mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 75mV @ 1mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.A transition frequency of 300MHz is present in the part.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSS30201MR6T1G Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 75mV @ 1mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 300MHz
NSS30201MR6T1G Applications
There are a lot of ON Semiconductor NSS30201MR6T1G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
