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2STF1360

2STF1360

2STF1360

STMicroelectronics

2STF1360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2STF1360 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.4W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number 2STF13
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 180mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 160
Max Junction Temperature (Tj) 150°C
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.525166 $0.525166
10 $0.495440 $4.9544
100 $0.467396 $46.7396
500 $0.440940 $220.47
1000 $0.415981 $415.981
2STF1360 Product Details

2STF1360 Overview


DC current gain in this device equals 160 @ 1A 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.Single BJT transistor can be broken down at a voltage of 60V volts.A maximum collector current of 3A volts can be achieved.

2STF1360 Features


the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 130MHz

2STF1360 Applications


There are a lot of STMicroelectronics 2STF1360 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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