2STF1360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STF1360 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.4W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2STF13
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
180mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
160
Max Junction Temperature (Tj)
150°C
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.525166
$0.525166
10
$0.495440
$4.9544
100
$0.467396
$46.7396
500
$0.440940
$220.47
1000
$0.415981
$415.981
2STF1360 Product Details
2STF1360 Overview
DC current gain in this device equals 160 @ 1A 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.Single BJT transistor can be broken down at a voltage of 60V volts.A maximum collector current of 3A volts can be achieved.
2STF1360 Features
the DC current gain for this device is 160 @ 1A 2V a collector emitter saturation voltage of 180mV the vce saturation(Max) is 500mV @ 150mA, 3A the emitter base voltage is kept at 6V the current rating of this device is 3A a transition frequency of 130MHz
2STF1360 Applications
There are a lot of STMicroelectronics 2STF1360 applications of single BJT transistors.