BDP949H6327XTSA1 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device has a 60V maximal voltage - Collector Emitter Breakdown.
BDP949H6327XTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
BDP949H6327XTSA1 Applications
There are a lot of Infineon Technologies BDP949H6327XTSA1 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
