BDP949H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BDP949H6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BDP949
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
5W
Transistor Application
AMPLIFIER
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.248209
$1.248209
10
$1.177556
$11.77556
100
$1.110902
$111.0902
500
$1.048020
$524.01
1000
$0.988699
$988.699
BDP949H6327XTSA1 Product Details
BDP949H6327XTSA1 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device has a 60V maximal voltage - Collector Emitter Breakdown.
BDP949H6327XTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V the vce saturation(Max) is 500mV @ 200mA, 2A
BDP949H6327XTSA1 Applications
There are a lot of Infineon Technologies BDP949H6327XTSA1 applications of single BJT transistors.