NSVMMBTA05LT1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).When collector current reaches its maximum, it can reach 500mA volts.

NSVMMBTA05LT1G Features

the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA

NSVMMBTA05LT1G Applications

There are a lot of ON Semiconductor NSVMMBTA05LT1G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter