NSVMSB1218A-RT1G Overview

This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the collector current and the base current.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).During maximum operation, collector current can be as low as 100mA volts.

NSVMSB1218A-RT1G Features

the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA

NSVMSB1218A-RT1G Applications

There are a lot of ON Semiconductor NSVMSB1218A-RT1G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface