NSVT489AMT1G Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.300MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
NSVT489AMT1G Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
NSVT489AMT1G Applications
There are a lot of ON Semiconductor NSVT489AMT1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
