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NTB6411ANG

NTB6411ANG

NTB6411ANG

ON Semiconductor

MOSFET NFET D2PAK 100V 72A 14MO

SOT-23

NTB6411ANG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 14MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 217W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 217W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 72A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 144ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 157 ns
Turn-Off Delay Time 107 ns
Continuous Drain Current (ID) 72A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 77A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 285A
Avalanche Energy Rating (Eas) 470 mJ
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.190857 $1.190857
10 $1.123450 $11.2345
100 $1.059858 $105.9858
500 $0.999866 $499.933
1000 $0.943270 $943.27

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