NTB6411ANG

new-10%

Manufacturer part number:NTB6411ANG

Manufacturer:ON Semiconductor

Description:MOSFET NFET D2PAK 100V 72A 14MO

Case Package:SOT-23

Datasheet:NTB6411ANG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	14MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	217W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	217W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	14m Ω @ 72A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	77A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	144ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	157 ns
Turn-Off Delay Time	107 ns
Continuous Drain Current (ID)	72A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	77A
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	285A
Avalanche Energy Rating (Eas)	470 mJ
Height	4.83mm
Length	10.29mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	RoHS Compliant
Lead Free	Lead Free