NTD3055L104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NTD3055L104 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
25A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Voltage
60V
Power Dissipation-Max
1.5W Ta 48W Tj
Element Configuration
Single
Current
12A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
48W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
104ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±15V
Fall Time (Typ)
40.5 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
12A
Gate to Source Voltage (Vgs)
15V
Drain-source On Resistance-Max
0.104Ohm
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
61 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
NTD3055L104 Product Details
Description
The NTD3055L104 is a MOSFET ¨C Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V. It is designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
NTDV and STDV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Lower RDS(on)
Lower VDS(on)
Tighter VSD Specification
Applications
Low voltage
High speed switching applications in power supplies