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NTD3055L104

NTD3055L104

NTD3055L104

ON Semiconductor

NTD3055L104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD3055L104 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 25A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Voltage 60V
Power Dissipation-Max 1.5W Ta 48W Tj
Element Configuration Single
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 104ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 40.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.104Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 61 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
NTD3055L104 Product Details

Description


The NTD3055L104 is a MOSFET ¨C Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V. It is designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls and bridge circuits.



Features


  • NTDV and STDV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free and are RoHS Compliant

  • Lower Diode Reverse Recovery Time

  • Lower Reverse Recovery Stored Charge

  • Lower RDS(on)

  • Lower VDS(on)

  • Tighter VSD Specification



Applications


  • Low voltage

  • High speed switching applications in power supplies

  • Power motor controls

  • Bridge circuits

  • Power supplies

  • Converters


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