NTD5413NT4G

new-10%

Manufacturer part number:NTD5413NT4G

Manufacturer:ON Semiconductor

Description:MOSFET 30A, 60V, 26mOhms N-Channel

Case Package:SOT-23

Datasheet:NTD5413NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	26MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	68W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	68W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1725pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Ta
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
RoHS Status	RoHS Compliant
Lead Free	Lead Free