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SI1037X-T1-E3

SI1037X-T1-E3

SI1037X-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 0.77A SC89

SOT-23

SI1037X-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Supplier Device Package SC-89 (SOT-563F)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 170mW Ta
Element Configuration Single
Power Dissipation 170mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 195mOhm @ 770mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 770mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 770mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Drain to Source Resistance 350mOhm
Rds On Max 195 mΩ
RoHS Status ROHS3 Compliant

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