NTMFS4833NST1G

new-10%

Manufacturer part number:NTMFS4833NST1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 16A SO-8FL

Case Package:SOT-23

Datasheet:NTMFS4833NST1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	CONSULT SALES OFFICE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	SENSEFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
Number of Elements	1
Power Dissipation-Max	900mW Ta 86.2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.31W
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5250pF @ 12V
Current - Continuous Drain (Id) @ 25°C	16A Ta 156A Tc
Gate Charge (Qg) (Max) @ Vgs	86nC @ 11.5V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	44 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	26A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	16A
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free