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NZT605

NZT605

NZT605

ON Semiconductor

NZT605 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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NZT605 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 11V
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.5A
Base Part Number NZT605
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 110V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage 110V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 110V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 10V
hFE Min 200
Max Junction Temperature (Tj) 150°C
Height 1.8mm
Length 6.5mm
Width 3.56mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.073120 $0.07312
500 $0.053765 $26.8825
1000 $0.044804 $44.804
2000 $0.041105 $82.21
5000 $0.038415 $192.075
10000 $0.035735 $357.35
15000 $0.034560 $518.4
50000 $0.033983 $1699.15
NZT605 Product Details

NZT605 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 1A 5V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.With the emitter base voltage set at 10V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.As you can see, the part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 110V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

NZT605 Features


the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1.5A
a transition frequency of 150MHz

NZT605 Applications


There are a lot of ON Semiconductor NZT605 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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