PZTA92T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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PZTA92T1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Type
General Purpose
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PZTA92
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Gain Bandwidth Product
50MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-900mV
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
1.57mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.10500
$0.105
2,000
$0.09450
$0.189
5,000
$0.08925
$0.44625
10,000
$0.08138
$0.8138
25,000
$0.07613
$1.90325
50,000
$0.07000
$3.5
PZTA92T1G Product Details
PZTA92T1G Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -900mV.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.When collector current reaches its maximum, it can reach 50mA volts.
PZTA92T1G Features
the DC current gain for this device is 40 @ 30mA 10V a collector emitter saturation voltage of -900mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 5V the current rating of this device is -500mA a transition frequency of 50MHz
PZTA92T1G Applications
There are a lot of ON Semiconductor PZTA92T1G applications of single BJT transistors.