SMSD1819A-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMSD1819A-RT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
150mW
Base Part Number
MSD1819A
Pin Count
3
Configuration
Single
Power - Max
150mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 2mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.045003
$0.045003
10
$0.042456
$0.42456
100
$0.040052
$4.0052
500
$0.037785
$18.8925
1000
$0.035647
$35.647
SMSD1819A-RT1G Product Details
SMSD1819A-RT1G Overview
This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SMSD1819A-RT1G Features
the DC current gain for this device is 210 @ 2mA 10V the vce saturation(Max) is 500mV @ 10mA, 100mA
SMSD1819A-RT1G Applications
There are a lot of ON Semiconductor SMSD1819A-RT1G applications of single BJT transistors.