SBC817-25LT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Parts of this part have transition frequencies of 100MHz.An input voltage of 45V volts is the breakdown voltage.The maximum collector current is 500mA volts.

SBC817-25LT1G Features

the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

SBC817-25LT1G Applications

There are a lot of ON Semiconductor SBC817-25LT1G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface