SBC847AWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 100MHz.When collector current reaches its maximum, it can reach 100mA volts.
SBC847AWT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847AWT1G Applications
There are a lot of ON Semiconductor SBC847AWT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
