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ZXTP25040DFLTA

ZXTP25040DFLTA

ZXTP25040DFLTA

Diodes Incorporated

ZXTP25040DFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25040DFLTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.5A
Frequency 270MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25040D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application SWITCHING
Gain Bandwidth Product 270MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 270MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.044521 $0.044521
500 $0.032736 $16.368
1000 $0.027280 $27.28
2000 $0.025028 $50.056
5000 $0.023390 $116.95
10000 $0.021758 $217.58
15000 $0.021043 $315.645
50000 $0.020691 $1034.55
ZXTP25040DFLTA Product Details

ZXTP25040DFLTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 7V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.As you can see, the part has a transition frequency of 270MHz.There is a breakdown input voltage of 40V volts that it can take.A maximum collector current of 1.5A volts can be achieved.

ZXTP25040DFLTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -1.5A
a transition frequency of 270MHz

ZXTP25040DFLTA Applications


There are a lot of Diodes Incorporated ZXTP25040DFLTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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