IRG7PH50K10DPBF Description

The IRG7PH50K10DPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

IRG7PH50K10DPBF Features

• Low VCE(ON) and switching losses

• 10μs Short Circuit SOA

• Square RBSOA

• Maximum Junction Temperature 150°C 

• Positive VCE (ON) Temperature Coefficient 

• VCES = 1200V

• IC = 50A, TC =100°C

• tSC ≥ 10μs, TJ(max) = 150°C

• VCE(ON) typ. = 1.9V @ IC = 35A

IRG7PH50K10DPBF Applications

• Solar Inverters

• Welding 

• Industrial Motor Drive

• UPS

• Automotive

• Traction

• Energy transmission