IRGSL4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGSL4062DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Element Configuration
Single
Power Dissipation
250W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
48A
Reverse Recovery Time
89 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Turn On Time
64 ns
Test Condition
400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 24A
Turn Off Time-Nom (toff)
164 ns
IGBT Type
Trench
Gate Charge
50nC
Current - Collector Pulsed (Icm)
96A
Td (on/off) @ 25°C
41ns/104ns
Switching Energy
115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
41ns
Height
9.65mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.145733
$1.145733
10
$1.080880
$10.8088
100
$1.019698
$101.9698
500
$0.961979
$480.9895
1000
$0.907528
$907.528
IRGSL4062DPBF Product Details
IRGSL4062DPBF Description
IRGSL4062DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGSL4062DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.