SMMBT5551LT3G Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 200mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Collector current can be as low as 600mA volts at its maximum.
SMMBT5551LT3G Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
SMMBT5551LT3G Applications
There are a lot of ON Semiconductor SMMBT5551LT3G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
