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SMMBT5551LT3G

  • SMMBT5551LT3G
  • SMMBT5551LT3G

SMMBT5551LT3G

SMMBT5551LT3G

ON Semiconductor

SMMBT5551LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBT5551LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Power - Max 225mW
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
VCEsat-Max 0.2 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.069600 $0.0696
500 $0.051176 $25.588
1000 $0.042647 $42.647
2000 $0.039126 $78.252
5000 $0.036566 $182.83
10000 $0.034015 $340.15
15000 $0.032897 $493.455
50000 $0.032347 $1617.35
SMMBT5551LT3G Product Details

SMMBT5551LT3G Overview


In this device, the DC current gain is 80 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 200mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Collector current can be as low as 600mA volts at its maximum.

SMMBT5551LT3G Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA

SMMBT5551LT3G Applications


There are a lot of ON Semiconductor SMMBT5551LT3G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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