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SMMBTA56WT3G

SMMBTA56WT3G

SMMBTA56WT3G

ON Semiconductor

SMMBTA56WT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBTA56WT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 150mW
Pin Count 3
Power - Max 150mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.05326 $0.5326
SMMBTA56WT3G Product Details

SMMBTA56WT3G Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.A maximum collector current of 500mA volts is possible.

SMMBTA56WT3G Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA

SMMBTA56WT3G Applications


There are a lot of ON Semiconductor SMMBTA56WT3G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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