SPZT3904T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In the part, the transition frequency is 300MHz.A maximum collector current of 200mA volts is possible.
SPZT3904T1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SPZT3904T1G Applications
There are a lot of ON Semiconductor SPZT3904T1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
