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TIP112G

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  • TIP112G

TIP112G

TIP112G

ON Semiconductor

TIP112G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP112G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) 260
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP11*
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Continuous Collector Current 2A
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.67000 $0.67
50 $0.53640 $26.82
100 $0.43180 $43.18
500 $0.34200 $171
1,000 $0.26719 $0.26719
TIP112G Product Details

TIP112G Description


The ON Semiconductor TIP112G   is a Darlington Bipolar Power Transistor designed for general?purpose amplifier and low?speed switching applications.



TIP112G  Features


  • High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc

  • Collector-Emitter Sustaining Voltage @ 30 mA

  • VCEO(sus) = 100 Vdc (Min) TIP112

  • Low Collector-Emitter Saturation Voltage

  • VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc

  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors

  • Compact TO-220 AB Package

  • Pb-Free Packages are Available



TIP112G Applications


  • General-purpose amplifier 

  • Low-speed switching


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