TIP120TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP120TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.214g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
2W
Current Rating
5A
Base Part Number
TIP120
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
4V @ 20mA, 5A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Height
16.51mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.87000
$0.87
10
$0.76400
$7.64
100
$0.59080
$59.08
500
$0.47108
$235.54
1,000
$0.38073
$0.38073
TIP120TU Product Details
TIP120TU Overview
This device has a DC current gain of 1000 @ 3A 3V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.The breakdown input voltage is 60V volts.Collector current can be as low as 5A volts at its maximum.
TIP120TU Features
the DC current gain for this device is 1000 @ 3A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 4V @ 20mA, 5A the emitter base voltage is kept at 5V the current rating of this device is 5A a transition frequency of 50MHz
TIP120TU Applications
There are a lot of ON Semiconductor TIP120TU applications of single BJT transistors.