2PC4617Q,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2PC4617Q,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SC-75
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
150mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
2PC4617Q,115 Product Details
2PC4617Q,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.SC-75 is the supplier device package for this product.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2PC4617Q,115 Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 200mV @ 5mA, 50mA the supplier device package of SC-75
2PC4617Q,115 Applications
There are a lot of Rochester Electronics, LLC 2PC4617Q,115 applications of single BJT transistors.