2SA1162GT1

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Manufacturer part number:2SA1162GT1

Manufacturer:Rochester Electronics, LLC

Description:2SA1162GT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

Case Package:SOT-23

Datasheet:2SA1162GT1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-59
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	200mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Frequency - Transition	80MHz
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.029040	$0.02904
500	$0.021353	$10.6765
1000	$0.017794	$17.794
2000	$0.016325	$32.65
5000	$0.015257	$76.285
10000	$0.014192	$141.92
15000	$0.013726	$205.89
50000	$0.013496	$674.8

2SA1162GT1 Overview

In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.SC-59 is the supplier device package for this product.The device has a 50V maximal voltage - Collector Emitter Breakdown.