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2SC6099-E

2SC6099-E

2SC6099-E

Rochester Electronics, LLC

2SC6099-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SC6099-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 165mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.25000 $0.25
500 $0.2475 $123.75
1000 $0.245 $245
1500 $0.2425 $363.75
2000 $0.24 $480
2500 $0.2375 $593.75
2SC6099-E Product Details

2SC6099-E Overview


DC current gain in this device equals 300 @ 100mA 5V, which is the ratio of the base current to the collector current.When VCE saturation is 165mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Product comes in the supplier's device package TP.The device has a 100V maximal voltage - Collector Emitter Breakdown.

2SC6099-E Features


the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the supplier device package of TP

2SC6099-E Applications


There are a lot of Rochester Electronics, LLC 2SC6099-E applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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