2SC6099-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SC6099-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
800mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
165mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.25000
$0.25
500
$0.2475
$123.75
1000
$0.245
$245
1500
$0.2425
$363.75
2000
$0.24
$480
2500
$0.2375
$593.75
2SC6099-E Product Details
2SC6099-E Overview
DC current gain in this device equals 300 @ 100mA 5V, which is the ratio of the base current to the collector current.When VCE saturation is 165mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Product comes in the supplier's device package TP.The device has a 100V maximal voltage - Collector Emitter Breakdown.
2SC6099-E Features
the DC current gain for this device is 300 @ 100mA 5V the vce saturation(Max) is 165mV @ 100mA, 1A the supplier device package of TP
2SC6099-E Applications
There are a lot of Rochester Electronics, LLC 2SC6099-E applications of single BJT transistors.