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2SC6099-E

2SC6099-E

2SC6099-E

Rochester Electronics, LLC

2SC6099-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SC6099-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 165mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 300MHz
RoHS StatusROHS3 Compliant
In-Stock:26360 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.25000$0.25
500$0.2475$123.75
1000$0.245$245
1500$0.2425$363.75
2000$0.24$480
2500$0.2375$593.75

2SC6099-E Product Details

2SC6099-E Overview


DC current gain in this device equals 300 @ 100mA 5V, which is the ratio of the base current to the collector current.When VCE saturation is 165mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Product comes in the supplier's device package TP.The device has a 100V maximal voltage - Collector Emitter Breakdown.

2SC6099-E Features


the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the supplier device package of TP

2SC6099-E Applications


There are a lot of Rochester Electronics, LLC 2SC6099-E applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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