2SCR346PT100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR346PT100Q Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 10mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.530000
$0.53
10
$0.500000
$5
100
$0.471698
$47.1698
500
$0.444998
$222.499
1000
$0.419810
$419.81
2SCR346PT100Q Product Details
2SCR346PT100Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 10mA 10V.When VCE saturation is 300mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2SCR346PT100Q Features
the DC current gain for this device is 82 @ 10mA 10V the vce saturation(Max) is 300mV @ 2mA, 20mA
2SCR346PT100Q Applications
There are a lot of ROHM Semiconductor 2SCR346PT100Q applications of single BJT transistors.