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2SCR346PT100Q

2SCR346PT100Q

2SCR346PT100Q

ROHM Semiconductor

2SCR346PT100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR346PT100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage400V
Max Breakdown Voltage 400V
RoHS StatusROHS3 Compliant
In-Stock:10217 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.530000$0.53
10$0.500000$5
100$0.471698$47.1698
500$0.444998$222.499
1000$0.419810$419.81

2SCR346PT100Q Product Details

2SCR346PT100Q Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 10mA 10V.When VCE saturation is 300mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2SCR346PT100Q Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 300mV @ 2mA, 20mA

2SCR346PT100Q Applications


There are a lot of ROHM Semiconductor 2SCR346PT100Q applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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