BDW42 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BDW42 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
85W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 50mA, 10A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
15A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
BDW42 Product Details
BDW42 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 50mA, 10A.As you can see, the part has a transition frequency of 4MHz.The device has a 100V maximal voltage - Collector Emitter Breakdown.
BDW42 Features
the DC current gain for this device is 1000 @ 5A 4V the vce saturation(Max) is 3V @ 50mA, 10A a transition frequency of 4MHz
BDW42 Applications
There are a lot of Rochester Electronics, LLC BDW42 applications of single BJT transistors.