D44H8 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
D44H8 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
50W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Transition Frequency
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.07000
$1.07
50
$0.91580
$45.79
100
$0.76220
$76.22
500
$0.63934
$319.67
1,000
$0.51644
$0.51644
2,500
$0.48572
$0.97144
5,000
$0.46523
$2.32615
D44H8 Product Details
D44H8 Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.The part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
D44H8 Features
the DC current gain for this device is 40 @ 4A 1V the vce saturation(Max) is 1V @ 400mA, 8A a transition frequency of 50MHz
D44H8 Applications
There are a lot of Rochester Electronics, LLC D44H8 applications of single BJT transistors.