MPS4250ARLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS4250ARLRM Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e1
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 10mA 5V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
50mA
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
MPS4250ARLRM Product Details
MPS4250ARLRM Overview
In this device, the DC current gain is 250 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 40V.
MPS4250ARLRM Features
the DC current gain for this device is 250 @ 10mA 5V the vce saturation(Max) is 250mV @ 500μA, 10mA
MPS4250ARLRM Applications
There are a lot of Rochester Electronics, LLC MPS4250ARLRM applications of single BJT transistors.