PVR100AZ-B2V5,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
PVR100AZ-B2V5,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
550mW
Transistor Type
NPN + Zener
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.10000
$0.1
500
$0.099
$49.5
1000
$0.098
$98
1500
$0.097
$145.5
2000
$0.096
$192
2500
$0.095
$237.5
PVR100AZ-B2V5,115 Product Details
PVR100AZ-B2V5,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.There is no device package available from the supplier for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PVR100AZ-B2V5,115 Features
the DC current gain for this device is 160 @ 100mA 1V the supplier device package of SOT-223
PVR100AZ-B2V5,115 Applications
There are a lot of Rochester Electronics, LLC PVR100AZ-B2V5,115 applications of single BJT transistors.