2SC6017-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC6017-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
950mW
Reach Compliance Code
not_compliant
Pin Count
3
Element Configuration
Single
Gain Bandwidth Product
200MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
360mV
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
360mV @ 250mA, 5A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
10A
Collector Emitter Saturation Voltage
180mV
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.154344
$2.154344
10
$2.032400
$20.324
100
$1.917358
$191.7358
500
$1.808829
$904.4145
1000
$1.706442
$1706.442
2SC6017-E Product Details
2SC6017-E Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 180mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 360mV @ 250mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.When collector current reaches its maximum, it can reach 10A volts.
2SC6017-E Features
the DC current gain for this device is 200 @ 1A 2V a collector emitter saturation voltage of 180mV the vce saturation(Max) is 360mV @ 250mA, 5A the emitter base voltage is kept at 6V
2SC6017-E Applications
There are a lot of ON Semiconductor 2SC6017-E applications of single BJT transistors.