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2SC6017-E

2SC6017-E

2SC6017-E

ON Semiconductor

2SC6017-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC6017-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation950mW
Reach Compliance Code not_compliant
Pin Count3
Element ConfigurationSingle
Gain Bandwidth Product200MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 360mV
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 360mV @ 250mA, 5A
Collector Emitter Breakdown Voltage50V
Current - Collector (Ic) (Max) 10A
Collector Emitter Saturation Voltage180mV
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7414 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.154344$2.154344
10$2.032400$20.324
100$1.917358$191.7358
500$1.808829$904.4145
1000$1.706442$1706.442

2SC6017-E Product Details

2SC6017-E Overview


In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 180mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 360mV @ 250mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.When collector current reaches its maximum, it can reach 10A volts.

2SC6017-E Features


the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 360mV @ 250mA, 5A
the emitter base voltage is kept at 6V

2SC6017-E Applications


There are a lot of ON Semiconductor 2SC6017-E applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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