2SB1424T100Q Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -3A for high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.Parts of this part have transition frequencies of 240MHz.Breakdown input voltage is 20V volts.During maximum operation, collector current can be as low as 3A volts.

2SB1424T100Q Features

the DC current gain for this device is 120 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 240MHz

2SB1424T100Q Applications

There are a lot of ROHM Semiconductor 2SB1424T100Q applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface